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2003-07-28 page 1 SPP11N65C3, spa11n65c3 spi11n65c3 preliminary data cool mos? power transistor v ds @ t jmax 820 v r ds(on) 0.38 w i d 11 a feature new revolutionary high voltage technology ultra low gate charge periodic avalanche rated extreme d v /d t rated high peak current capability improved transconductance p-to262-3-1 p-to220-3-31 p-to220-3-1 marking 11n65c3 11n65c3 11n65c3 type package ordering code SPP11N65C3 p-to220-3-1 q67040-s4557 spa11n65c3 p-to220-3-31 q67040-s4554 spi11n65c3 p-to262-3-1 q67040-s4561 maximum ratings parameter symbol value unit spa continuous drain current t c = 25 c t c = 100 c i d 11 7 11 1) 7 1) a pulsed drain current, t p limited by t jmax i d puls 33 33 a avalanche energy, single pulse i d =2.5a, v dd =50v e as 340 340 mj avalanche energy, repetitive t ar limited by t jmax 2) i d =4a, v dd =50v e ar 0.6 0.6 avalanche current, repetitive t ar limited by t jmax i ar 4 4 a gate source voltage v gs 20 20 v gate source voltage ac (f >1hz) v gs 30 30 power dissipation, t c = 25c p tot 125 33 w spp_i operating and storage temperature t j , t stg -55...+150 c
2003-07-28 page 2 SPP11N65C3, spa11n65c3 spi11n65c3 preliminary data maximum ratings parameter symbol value unit drain source voltage slope v ds = 480 v, i d = 11 a, t j = 125 c d v /d t 50 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 1 k/w thermal resistance, junction - case, fullpak r thjc_fp - - 3.8 thermal resistance, junction - ambient, leaded r thja - - 62 thermal resistance, junction - ambient, fullpak r thja_fp - - 80 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 3) r thja - - - 35 62 - soldering temperature, 1.6 mm (0.063 in.) from case for 10s t sold - - 260 c electrical characteristics, at t j =25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 730 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =4a - 730 - gate threshold voltage v gs(th) i d =500 m a, v gs =v ds 2.1 3 3.9 zero gate voltage drain current i dss v ds =600v, v gs =0v, t j =25c t j =150c - - 0.1 - 1 100 a gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =7a t j =25c t j =150c - - 0.34 0.92 0.38 - w gate input resistance r g f =1mhz, open drain - 0.86 -
2003-07-28 page 3 SPP11N65C3, spa11n65c3 spi11n65c3 preliminary data electrical characteristics parameter symbol conditions values unit min. typ. max. transconductance g fs v ds 3 2* i d * r ds(on)max , i d =7a - 8.3 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 1200 - pf output capacitance c oss - 390 - reverse transfer capacitance c rss - 30 - effective output capacitance, 4) energy related c o(er) v gs =0v, v ds =0v to 480v - 45 - effective output capacitance, 5) time related c o(tr) - 85 - turn-on delay time t d(on) v dd =380v, v gs =0/10v, i d =11a, r g =6.8 w - 10 - ns rise time t r - 5 - turn-off delay time t d(off) - 44 70 fall time t f - 5 9 gate charge characteristics gate to source charge q gs v dd =480v, i d =11a - 5.5 - nc gate to drain charge q gd - 22 - gate charge total q g v dd =480v, i d =11a, v gs =0 to 10v - 45 60 gate plateau voltage v (plateau) v dd =480v, i d =11a - 5.5 - v 1 limited only by maximum temperature 2 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 3 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. 4 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 5 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .
2003-07-28 page 4 SPP11N65C3, spa11n65c3 spi11n65c3 preliminary data electrical characteristics parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 11 a inverse diode direct current, pulsed i sm - - 33 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =480v, i f = i s , d i f /d t =100a/s - 400 600 ns reverse recovery charge q rr - 6 - c peak reverse recovery current i rrm - 41 - a peak rate of fall of reverse recovery current di rr /dt t j =25c - 1200 - a/s typical transient thermal characteristics symbol value unit symbol value unit spa spa r th1 0.015 0.15 k/w c th1 0.0001878 0.0001878 ws/k r th2 0.03 0.03 c th2 0.0007106 0.0007106 r th3 0.056 0.056 c th3 0.000988 0.000988 r th4 0.197 0.194 c th4 0.002791 0.002791 r th5 0.216 0.413 c th5 0.007285 0.007401 r th6 0.083 2.522 c th6 0.063 0.412 spp_b spp_b external heatsink t j t case t amb c th1 c th2 r th1 r th ,n c th ,n p tot (t)
2003-07-28 page 5 SPP11N65C3, spa11n65c3 spi11n65c3 preliminary data 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 10 20 30 40 50 60 70 80 90 100 110 120 w 140 SPP11N65C3 p tot 2 power dissipation fullpak p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 5 10 15 20 25 w 35 p tot 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.0008 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 4 safe operating area fullpak i d = f ( v ds ) parameter: d = 0, t c = 25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.0008 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms dc
2003-07-28 page 6 SPP11N65C3, spa11n65c3 spi11n65c3 preliminary data 5 transient thermal impedance fullpak z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 6 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 3 6 9 12 15 18 21 v 27 v ds 0 4 8 12 16 20 24 28 32 a 40 i d 4,5v 5v 5,5v 6v 6,5v 7v 20v 10v 8v 7 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 5 10 15 v 25 v ds 0 2 4 6 8 10 12 14 16 18 a 22 i d 4v 4.5v 5v 5.5v 6v 20v 8v 7v 7.5v 8 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 2 4 6 8 10 12 14 16 a 20 i d 0.4 0.6 0.8 1 1.2 1.4 1.6 w 2 r ds(on) 4v 4.5v 5v 5.5v 6v 6.5v 8v 20v
2003-07-28 page 7 SPP11N65C3, spa11n65c3 spi11n65c3 preliminary data 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 7 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 w 2.1 SPP11N65C3 r ds(on) typ 98% 10 typ. transfer characteristics i d = f ( v gs ); v ds 3 2 x i d x r ds(on)max parameter: t p = 10 s 0 2 4 6 8 10 12 v 15 v gs 0 4 8 12 16 20 24 28 32 a 40 i d 25c 150c 12 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a SPP11N65C3 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 11 typ. gate charge v gs = f ( q gate ) parameter: i d = 11 a pulsed 0 10 20 30 40 50 nc 70 q gate 0 2 4 6 8 10 12 v 16 SPP11N65C3 v gs 0,8 v ds max ds max v 0,2
2003-07-28 page 8 SPP11N65C3, spa11n65c3 spi11n65c3 preliminary data 13 typ. switching time t = f ( i d ), inductive load, t j =125c par.: v ds =380v, v gs =0/+13v, r g =6.8 w 0 2 4 6 8 a 12 i d 0 5 10 15 20 25 30 35 40 45 50 55 60 ns 70 t tr td(off) td(on) tf 14 typ. switching time t = f ( r g ), inductive load, t j =125c par.: v ds =380v, v gs =0/+13v, i d =11 a 0 10 20 30 40 50 w 70 r g 0 50 100 150 200 250 ns 350 t td(off) td(on) tr tf 15 typ. drain current slope d i /d t = f( r g ), inductive load, t j = 125c par.: v ds =380v, v gs =0/+13v, i d =11a 0 20 40 60 80 w 120 r g 0 500 1000 1500 2000 a/s 3000 d i /d t di/dt(on) di/dt(off) 16 typ. drain source voltage slope d v /d t = f( r g ), inductive load, t j = 125c par.: v ds =380v, v gs =0/+13v, i d =11a 0 10 20 30 40 50 w 70 r g 10 20 30 40 50 60 70 80 90 100 110 120 v/ns 140 d v /d t dv/dt(off) dv/dt(on)
2003-07-28 page 9 SPP11N65C3, spa11n65c3 spi11n65c3 preliminary data 17 typ. switching losses e = f ( i d ), inductive load, t j =125c par.: v ds =380v, v gs =0/+13v, r g =6.8 w 0 2 4 6 8 a 12 i d 0 0.005 0.01 0.015 0.02 0.025 0.03 mws 0.04 e eon* eoff *) eon includes spd06s60 diode commutation losses 18 typ. switching losses e = f ( r g ), inductive load, t j =125c par.: v ds =380v, v gs =0/+13v, i d =11a 0 10 20 30 40 50 w 70 r g 0 0.04 0.08 0.12 0.16 mws 0.24 e eon* eoff *) eon includes spd06s60 diode commutation losses 19 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 0.5 1 1.5 2 2.5 3 a 4 i ar t j(start) =25c t j(start) =125c 20 avalanche energy e as = f ( t j ) par.: i d = 2.5 a, v dd = 50 v 20 40 60 80 100 120 c 160 t j 0 50 100 150 200 250 mj 350 e as
2003-07-28 page 10 SPP11N65C3, spa11n65c3 spi11n65c3 preliminary data 22 avalanche power losses p ar = f ( f ) parameter: e ar =0.6mj 10 4 10 5 10 6 hz f 0 50 100 150 200 w 300 p ar 21 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 657 677 697 717 737 757 777 797 817 837 857 v 897 SPP11N65C3 v (br)dss 23 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 400 v 600 v ds 0 10 1 10 2 10 3 10 4 10 pf c c iss c oss c rss 24 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 400 v 600 v ds 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 j 7.5 e oss
2003-07-28 page 11 SPP11N65C3, spa11n65c3 spi11n65c3 preliminary data definition of diodes switching characteristics
2003-07-28 page 12 SPP11N65C3, spa11n65c3 spi11n65c3 preliminary data p-to-220-3-1 titel: (gpt09472.eps) erstellt von: adobe illustrator(tm) 7.0 vorschau: diese eps-grafik wurde nicht gespeichert mit einer enthaltenen vorschau. kommentar: diese eps-grafik wird an einen postscript-drucker gedruckt, aber nicht an andere druckertypen.
2003-07-28 page 13 SPP11N65C3, spa11n65c3 spi11n65c3 preliminary data p-to-262-3-1 (i 2 -pak) p-to-220-3-31 (fullpak) please refer to mounting instructions (application note an-to220-3-31-01)
2003-07-28 page 14 SPP11N65C3, spa11n65c3 spi11n65c3 preliminary data published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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